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SSM6L61NU Datasheet, Toshiba Semiconductor

SSM6L61NU mosfet equivalent, silicon dual-channel mosfet.

SSM6L61NU Avg. rating / M : 1.0 rating-15

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SSM6L61NU Datasheet

Features and benefits

(1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = .

Application


* Power Management Switches
* DC-DC Converters 2. Features (1) Low drain-source on-resistance Q1 N-channel: RDS(.

Image gallery

SSM6L61NU Page 1 SSM6L61NU Page 2 SSM6L61NU Page 3

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